Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.STMicroelectronics
Series
aMOS5™SuperMESH5™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
700 V800 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)8.5A (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 2.5A, 10V950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
15.5 nC @ 10 V16.5 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 100 V950 pF @ 100 V
Power Dissipation (Max)
104W (Tc)110W (Tc)
Supplier Device Package
DPAKTO-252 (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MFG_DPAK(TO252-3)
STD8N80K5
MOSFET N CH 800V 6A DPAK
STMicroelectronics
7,120
In Stock
1 : ¥18.31000
Cut Tape (CT)
2,500 : ¥8.27118
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
6A (Tc)
10V
950mOhm @ 3A, 10V
5V @ 100µA
16.5 nC @ 10 V
±30V
450 pF @ 100 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
4,617
In Stock
1 : ¥10.67000
Cut Tape (CT)
2,500 : ¥3.99200
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
8.5A (Tc)
10V
600mOhm @ 2.5A, 10V
4V @ 250µA
15.5 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.