Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2212 GANFET N-CH 100V 18A DIE EPC	148,074 In Stock	1 : ¥16.34000 Cut Tape (CT) 2,500 : ¥10.87760 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	100 V	18A (Ta)	5V	13.5mOhm @ 11A, 5V	2.5V @ 3mA	4 nC @ 5 V	+6V, -4V	407 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2053 GANFET N-CH 100V 48A DIE EPC	24,190 In Stock	1 : ¥53.85000 Cut Tape (CT) 2,500 : ¥26.20561 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	100 V	48A (Ta)	5V	3.8mOhm @ 25A, 5V	2.5V @ 9mA	14.8 nC @ 5 V	+6V, -4V	1895 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.