Single FETs, MOSFETs

Results: 2
Manufacturer
Goford SemiconductorToshiba Semiconductor and Storage
Series
TrenchFET®U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 3A, 10V1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.34 nC @ 4.5 V24.5 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 10 V1253 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-SOPSSM
Package / Case
8-SOIC (0.154", 3.90mm Width)SC-75, SOT-416
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
13,197
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.33909
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.2V, 4.5V
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34 nC @ 4.5 V
±10V
36 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
SSM
SC-75, SOT-416
G06N06S
G7P03S
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
Goford Semiconductor
3,333
In Stock
1 : ¥3.28000
Cut Tape (CT)
4,000 : ¥1.10075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
9A (Tc)
4.5V, 10V
22mOhm @ 3A, 10V
2V @ 250µA
24.5 nC @ 10 V
±20V
1253 pF @ 15 V
-
2.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.