Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

T2N7002BK,LM MOSFET N-CH 60V 400MA SOT23-3 Toshiba Semiconductor and Storage	265,395 In Stock	1 : ¥1.23000 Cut Tape (CT) 3,000 : ¥0.23206 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS84AK,215 MOSFET P-CH 50V 180MA TO236AB Nexperia USA Inc.	660,613 In Stock	1 : ¥1.81000 Cut Tape (CT) 3,000 : ¥0.30405 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	180mA (Ta)	10V	7.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 5 V	±20V	36 pF @ 25 V	-	350mW (Ta), 1.14W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
TK2R9E10PL,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	100 In Stock	1 : ¥28.73000 Tube	U-MOSIX-H	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Ta)	4.5V, 10V	2.9mOhm @ 50A, 10V	2.5V @ 1mA	161 nC @ 10 V	±20V	9500 pF @ 50 V	-	306W (Tc)	175°C	-	-	Through Hole	TO-220	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.