Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon TechnologiesToshiba Semiconductor and Storage
Series
-OptiMOS™ 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)7.7A (Ta), 31A (Tc)55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
7.7mOhm @ 27.5A, 10V23mOhm @ 10A, 10V3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 500µA3.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs
0.87 nC @ 10 V9.3 nC @ 10 V44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V690 pF @ 50 V2800 pF @ 50 V
Power Dissipation (Max)
370mW (Ta)3W (Ta), 48W (Tc)93W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Supplier Device Package
DPAKPG-TSDSON-8 FLSOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
13,340
In Stock
1 : ¥9.61000
Cut Tape (CT)
5,000 : ¥3.77390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
7.7A (Ta), 31A (Tc)
8V, 10V
23mOhm @ 10A, 10V
3.3V @ 13µA
9.3 nC @ 10 V
±20V
690 pF @ 50 V
-
3W (Ta), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8 FL
8-PowerTDFN
SOT-23-3
DMN65D8L-7
MOSFET N-CH 60V 310MA SOT23
Diodes Incorporated
370,823
In Stock
1 : ¥1.40000
Cut Tape (CT)
3,000 : ¥0.23992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
0.87 nC @ 10 V
±20V
22 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DPAK+
TK7R7P10PL,RQ
X35 PB-F POWER MOSFET TRANSISTOR
Toshiba Semiconductor and Storage
10,449
In Stock
1 : ¥12.81000
Cut Tape (CT)
2,500 : ¥3.48017
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
55A (Tc)
4.5V, 10V
7.7mOhm @ 27.5A, 10V
2.5V @ 500µA
44 nC @ 10 V
±20V
2800 pF @ 50 V
-
93W (Tc)
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.