Single FETs, MOSFETs

Results: 2
Manufacturer
Rohm SemiconductorVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
45 V80 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
33mOhm @ 10A, 10V190mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 4.5 V150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 10 V4500 pF @ 25 V
Power Dissipation (Max)
700mW (Ta)68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® SO-8TSMT3
Package / Case
PowerPAK® SO-8SC-96
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPak SO-8L
SQJ479EP-T1_GE3
MOSFET P-CH 80V 32A PPAK SO-8
Vishay Siliconix
18,366
In Stock
1 : ¥9.69000
Cut Tape (CT)
3,000 : ¥4.01919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
32A (Tc)
4.5V, 10V
33mOhm @ 10A, 10V
2.5V @ 250µA
150 nC @ 10 V
±20V
4500 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TSMT3
RSR020P05HZGTL
MOSFET P-CH 45V 2A TSMT3
Rohm Semiconductor
9,000
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.94964
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
45 V
2A (Ta)
4V, 10V
190mOhm @ 2A, 10V
3V @ 1mA
4.5 nC @ 4.5 V
±20V
500 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TSMT3
SC-96
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.