Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NVTFS5124PLTAG MOSFET P-CH 60V 2.4A 8WDFN onsemi	2,835 In Stock	1 : ¥6.32000 Cut Tape (CT) 1,500 : ¥2.70513 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	2.4A (Ta)	4.5V, 10V	260mOhm @ 3A, 10V	2.5V @ 250µA	6 nC @ 10 V	±20V	250 pF @ 25 V	-	3W (Ta), 18W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SIS782DN-T1-GE3 MOSFET N-CH 30V 16A PPAK1212-8 Vishay Siliconix	8,739 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.91420 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	16A (Tc)	4.5V, 10V	9.5mOhm @ 10A, 10V	2.3V @ 250µA	30.5 nC @ 10 V	±20V	1025 pF @ 15 V	Schottky Diode (Body)	41W (Tc)	-50°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
NVTFS5C658NLWFTAG MOSFET N-CH 60V 109A 8WDFN onsemi	1,192 In Stock	1 : ¥13.55000 Cut Tape (CT) 1,500 : ¥6.42658 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	109A (Tc)	4.5V, 10V	5mOhm @ 50A, 10V	2.2V @ 250µA	12 nC @ 4.5 V	±20V	1935 pF @ 25 V	-	114W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.