Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
600 V700 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)48A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 15.9A, 10V1.2Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 10 V67 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
174 pF @ 400 V2895 pF @ 400 V
Power Dissipation (Max)
6.3W (Tc)164W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-SOT223PG-TO220-3
Package / Case
TO-220-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IPP60R060P7XKSA1
MOSFET N-CH 600V 48A TO220-3
Infineon Technologies
500
In Stock
50 : ¥35.31400
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
67 nC @ 10 V
±20V
2895 pF @ 400 V
-
164W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-SOT223
IPN70R1K2P7SATMA1
MOSFET N-CH 700V 4.5A SOT223
Infineon Technologies
498
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥1.79950
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
700 V
4.5A (Tc)
10V
1.2Ohm @ 900mA, 10V
3.5V @ 40µA
4.8 nC @ 10 V
±16V
174 pF @ 400 V
-
6.3W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.