Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V65 V
Current - Continuous Drain (Id) @ 25°C
192mA (Ta)25.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 5V7.5V, 10V
Rds On (Max) @ Id, Vgs
3.85mOhm @ 10A, 10V8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
2.1V @ 250µA3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 5 V44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 30 V1920 pF @ 30 V
Power Dissipation (Max)
500mW5W (Ta), 65.7W (Tc)
Supplier Device Package
PowerPAK® SO-8X1-DFN1006-3
Package / Case
3-UFDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR188DP-T1-RE3
MOSFET N-CH 60V 25.5A/60A PPAK
Vishay Siliconix
745
In Stock
1 : ¥11.82000
Cut Tape (CT)
3,000 : ¥4.88957
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
25.5A (Ta), 60A (Tc)
7.5V, 10V
3.85mOhm @ 10A, 10V
3.6V @ 250µA
44 nC @ 10 V
±20V
1920 pF @ 30 V
-
5W (Ta), 65.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
X2-DFN1006-3
DMP68D0LFB-7B
MOSFET BVDSS: 61V~100V X2-DFN100
Diodes Incorporated
9,700
In Stock
260,000
Factory
1 : ¥3.04000
Cut Tape (CT)
10,000 : ¥0.39392
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
65 V
192mA (Ta)
2.5V, 5V
8Ohm @ 100mA, 5V
2.1V @ 250µA
4.1 nC @ 5 V
±20V
36 pF @ 30 V
-
500mW
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.