Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
55 V100 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)10A (Tc)12A (Tc)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
65mOhm @ 10A, 10V140mOhm @ 5A, 10V185mOhm @ 6A, 10V210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.7 nC @ 10 V15 nC @ 5 V20 nC @ 5 V25 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V440 pF @ 25 V480 pF @ 25 V1167 pF @ 25 V
Power Dissipation (Max)
42W (Tc)45W (Tc)48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
IPAK (TO-251AA)TO-252-3TO-252AA (DPAK)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252-2
DMN10H170SK3-13
MOSFET N-CH 100V 12A TO252-3
Diodes Incorporated
133,952
In Stock
237,500
Factory
1 : ¥3.45000
Cut Tape (CT)
2,500 : ¥1.61631
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
4.5V, 10V
140mOhm @ 5A, 10V
3V @ 250µA
9.7 nC @ 10 V
±20V
1167 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAK (TO-251)
IRLU024NPBF
MOSFET N-CH 55V 17A IPAK
Infineon Technologies
3,291
In Stock
1 : ¥6.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
4V, 10V
65mOhm @ 10A, 10V
2V @ 250µA
15 nC @ 5 V
±16V
480 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO252-3
IRLR120NTRPBF
MOSFET N-CH 100V 10A DPAK
Infineon Technologies
12,664
In Stock
1 : ¥8.21000
Cut Tape (CT)
2,000 : ¥3.38646
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
4V, 10V
185mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAK (TO-251)
IRFU120NPBF
MOSFET N-CH 100V 9.4A IPAK
Infineon Technologies
5,054
In Stock
1 : ¥5.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
9.4A (Tc)
10V
210mOhm @ 5.6A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
330 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.