Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMG1012UW-7 MOSFET N-CH 20V 1A SOT323 Diodes Incorporated	529,413 In Stock 9,801,000 Factory	1 : ¥2.79000 Cut Tape (CT) 3,000 : ¥0.46763 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1A (Ta)	1.8V, 4.5V	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.74 nC @ 4.5 V	±6V	60.67 pF @ 16 V	-	290mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323
2N7002W-7-F MOSFET N-CH 60V 115MA SOT323 Diodes Incorporated	283,586 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52275 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	7.5Ohm @ 50mA, 5V	2V @ 250µA	-	±20V	50 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323
BSS84AK,215 MOSFET P-CH 50V 180MA TO236AB Nexperia USA Inc.	663,861 In Stock	1 : ¥1.81000 Cut Tape (CT) 3,000 : ¥0.30406 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	180mA (Ta)	10V	7.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 5 V	±20V	36 pF @ 25 V	-	350mW (Ta), 1.14W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
2N7002T-TP MOSFET N-CH 60V 115MA SOT523 Micro Commercial Co	3,808 In Stock	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.51311 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Tj)	5V, 10V	13.5Ohm @ 500mA, 10V	2V @ 250µA	-	±20V	50 pF @ 25 V	-	150mW	-55°C ~ 150°C	-	-	Surface Mount	SOT-523	SOT-523

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.