Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC160N10NS3GATMA1 MOSFET N-CH 100V 8.8A/42A TDSON Infineon Technologies	22,425 In Stock	1 : ¥12.89000 Cut Tape (CT) 5,000 : ¥5.07372 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	8.8A (Ta), 42A (Tc)	6V, 10V	16mOhm @ 33A, 10V	3.5V @ 33µA	25 nC @ 10 V	±20V	1700 pF @ 50 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IRLR3636TRPBF MOSFET N-CH 60V 50A DPAK Infineon Technologies	15,445 In Stock	1 : ¥15.52000 Cut Tape (CT) 2,000 : ¥6.98063 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	6.8mOhm @ 50A, 10V	2.5V @ 100µA	49 nC @ 4.5 V	±16V	3779 pF @ 50 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
ZXMP3A16N8TA MOSFET P-CH 30V 5.6A 8SO Diodes Incorporated	1,030 In Stock 3,000 Factory	1 : ¥7.22000 Cut Tape (CT) 500 : ¥3.90954 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Ta)	4.5V, 10V	40mOhm @ 4.2A, 10V	1V @ 250µA	29.6 nC @ 10 V	±20V	1022 pF @ 15 V	-	1.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.