Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138LT1G MOSFET N-CH 50V 200MA SOT23-3 onsemi	371,445 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52959 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	5V	3.5Ohm @ 200mA, 5V	1.5V @ 1mA	-	±20V	50 pF @ 25 V	-	225mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2323DS-T1-E3 MOSFET P-CH 20V 3.7A SOT23-3 Vishay Siliconix	41,894 In Stock	1 : ¥5.83000 Cut Tape (CT) 3,000 : ¥2.20368 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.8V, 4.5V	39mOhm @ 4.7A, 4.5V	1V @ 250µA	19 nC @ 4.5 V	±8V	1020 pF @ 10 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BUK9Y6R5-40HX MOSFET N-CH 40V 70A LFPAK56 Nexperia USA Inc.	2,991 In Stock	1 : ¥7.14000 Cut Tape (CT) 1,500 : ¥3.24375 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	2.15V @ 1mA	29 nC @ 10 V	±20V	2036 pF @ 25 V	-	64W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.