Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologies
Series
aMOS™CoolMOS™ C6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
23.8A (Tc)27A (Tc)
Rds On (Max) @ Id, Vgs
160mOhm @ 11.3A, 10V160mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 750µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V75 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1294 pF @ 100 V1660 pF @ 100 V
Power Dissipation (Max)
176W (Tc)357W (Tc)
Supplier Device Package
PG-TO263-3TO-263 (D2PAK)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
7,597
In Stock
1 : ¥31.61000
Cut Tape (CT)
800 : ¥19.10453
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
27A (Tc)
10V
160mOhm @ 13.5A, 10V
4V @ 250µA
26 nC @ 10 V
±30V
1294 pF @ 100 V
-
357W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R160C6ATMA1
MOSFET N-CH 600V 23.8A D2PAK
Infineon Technologies
5,747
In Stock
1 : ¥32.02000
Cut Tape (CT)
1,000 : ¥16.56500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
23.8A (Tc)
10V
160mOhm @ 11.3A, 10V
3.5V @ 750µA
75 nC @ 10 V
±20V
1660 pF @ 100 V
-
176W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.