Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
3A (Tj)10A (Tc)
Rds On (Max) @ Id, Vgs
160mOhm @ 1.5A, 10V160mOhm @ 5A, 10V
Power Dissipation (Max)
2.6W (Tc)35W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)175°C (TJ)
Supplier Device Package
DPAKSOT-223
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-223
STN3P6F6
MOSFET P-CH 60V SOT223
STMicroelectronics
10,176
In Stock
1 : ¥7.72000
Cut Tape (CT)
4,000 : ¥2.94100
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3A (Tj)
10V
160mOhm @ 1.5A, 10V
4V @ 250µA
6.4 nC @ 10 V
±20V
340 pF @ 48 V
-
2.6W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
MFG_DPAK(TO252-3)
STD10P6F6
MOSFET P CH 60V 10A DPAK
STMicroelectronics
4,895
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,500 : ¥3.26878
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
10V
160mOhm @ 5A, 10V
4V @ 250µA
6.4 nC @ 10 V
±20V
340 pF @ 48 V
-
35W (Tc)
175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.