Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
CoolMOS™ G7OptiMOS™U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V150 V600 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 41A (Tc)75A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.34mOhm @ 50A, 10V28mOhm @ 28.8A, 10V72mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
2V @ 5.55mA2.5V @ 1mA4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V123 nC @ 10 V224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4820 pF @ 400 V8100 pF @ 30 V11000 pF @ 75 V
Power Dissipation (Max)
960mW (Ta), 170W (Tc)3.8W (Ta), 300W (Tc)391W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Supplier Device Package
8-SOP Advance (5x5)PG-HSOF-8-2PG-TO263-3
Package / Case
8-PowerSFN8-PowerVDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
13,138
In Stock
1 : ¥22.58000
Cut Tape (CT)
5,000 : ¥6.88597
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
1.34mOhm @ 50A, 10V
2.5V @ 1mA
91 nC @ 10 V
±20V
8100 pF @ 30 V
-
960mW (Ta), 170W (Tc)
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
1,545
In Stock
1 : ¥38.01000
Cut Tape (CT)
1,000 : ¥19.65608
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
4.6A (Ta), 41A (Tc)
4.5V, 10V
72mOhm @ 37A, 10V
2V @ 5.55mA
224 nC @ 10 V
±20V
11000 pF @ 75 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-HSOF-8-2
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
Infineon Technologies
4,479
In Stock
1 : ¥112.88000
Cut Tape (CT)
2,000 : ¥66.51379
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
75A (Tc)
10V
28mOhm @ 28.8A, 10V
4V @ 1.44mA
123 nC @ 10 V
±20V
4820 pF @ 400 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
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of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.