Single FETs, MOSFETs

Results: 2
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 100A (Tc)32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
2.4mOhm @ 25A, 8V5.1mOhm @ 20A, 8V
Vgs(th) (Max) @ Id
1.6V @ 250µA1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.6 nC @ 4.5 V23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 15 V3420 pF @ 15 V
Power Dissipation (Max)
3.1W (Ta)3.2W (Ta)
Supplier Device Package
8-VSON-CLIP (5x6)8-VSONP (5x6)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD17310Q5A
MOSFET N-CH 30V 21A/100A 8VSON
Texas Instruments
22,001
In Stock
210,429
Marketplace
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥3.11257
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 100A (Tc)
3V, 8V
5.1mOhm @ 20A, 8V
1.8V @ 250µA
11.6 nC @ 4.5 V
+10V, -8V
1560 pF @ 15 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD17303Q5
MOSFET N-CH 30V 32A/100A 8VSON
Texas Instruments
5,069
In Stock
1 : ¥13.79000
Cut Tape (CT)
2,500 : ¥6.21991
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
3V, 8V
2.4mOhm @ 25A, 8V
1.6V @ 250µA
23 nC @ 4.5 V
+10V, -8V
3420 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.