Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002W-7-F MOSFET N-CH 60V 115MA SOT323 Diodes Incorporated	264,771 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52273 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	7.5Ohm @ 50mA, 5V	2V @ 250µA	-	±20V	50 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
DMP10H400SEQ-13 MOSFET P-CH 100V 2.3A/6A SOT223 Diodes Incorporated	4,398 In Stock 802,500 Factory	1 : ¥5.58000 Cut Tape (CT) 2,500 : ¥2.10718 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	2.3A (Ta), 6A (Tc)	4.5V, 10V	250mOhm @ 5A, 10V	3V @ 250µA	17.5 nC @ 10 V	±20V	1239 pF @ 25 V	-	2W (Ta), 13.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
SI7114ADN-T1-GE3 MOSFET N-CH 30V 35A PPAK 1212-8 Vishay Siliconix	21,066 In Stock	1 : ¥7.47000 Cut Tape (CT) 3,000 : ¥2.46285 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	35A (Tc)	4.5V, 10V	7.5mOhm @ 18A, 10V	2.5V @ 250µA	32 nC @ 10 V	±20V	1230 pF @ 15 V	-	3.7W (Ta), 39W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.