Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

C2M1000170D SICFET N-CH 1700V 4.9A TO247-3 Wolfspeed, Inc.	2,245 In Stock	1 : ¥93.35000 Tube	Z-FET™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	4.9A (Tc)	20V	1.1Ohm @ 2A, 20V	4V @ 500µA	13 nC @ 20 V	+25V, -10V	191 pF @ 1000 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFR2905ZTRPBF MOSFET N-CH 55V 42A DPAK Infineon Technologies	2,674 In Stock	1 : ¥10.43000 Cut Tape (CT) 2,000 : ¥4.32706 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	14.5mOhm @ 36A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1380 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.