Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 74A, 10V16mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.6V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
23.1 nC @ 10 V300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1820 pF @ 75 V11560 pF @ 25 V
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
DirectFET™ Isometric L8PG-TDSON-8-7
Package / Case
8-PowerTDFNDirectFET™ Isometric L8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC160N15NS5ATMA1
MOSFET N-CH 150V 56A TDSON
Infineon Technologies
9,711
In Stock
1 : ¥19.62000
Cut Tape (CT)
5,000 : ¥8.51638
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
56A (Tc)
8V, 10V
16mOhm @ 28A, 10V
4.6V @ 60µA
23.1 nC @ 10 V
±20V
1820 pF @ 75 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
DIRECTFET L8
AUIRF7769L2TR
MOSFET N-CH 100V 375A DIRECTFET
Infineon Technologies
7,917
In Stock
1 : ¥77.50000
Cut Tape (CT)
4,000 : ¥41.18083
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
375A (Tc)
10V
3.5mOhm @ 74A, 10V
4V @ 250µA
300 nC @ 10 V
±20V
11560 pF @ 25 V
-
3.3W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DirectFET™ Isometric L8
DirectFET™ Isometric L8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.