Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

RE1C002UNTCL MOSFET N-CH 20V 200MA EMT3F Rohm Semiconductor	1,344,591 In Stock	1 : ¥1.89000 Cut Tape (CT) 3,000 : ¥0.19539 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.2V, 2.5V	1.2Ohm @ 100mA, 2.5V	1V @ 1mA	-	±8V	25 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
BSS816NWH6327XTSA1 MOSFET N-CH 20V 1.4A SOT323-3 Infineon Technologies	123,598 In Stock	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.54231 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.4A (Ta)	1.8V, 2.5V	160mOhm @ 1.4A, 2.5V	750mV @ 3.7µA	0.6 nC @ 2.5 V	±8V	180 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT323	SC-70, SOT-323
BUK98150-55A/CUF MOSFET N-CH 55V 5.5A SOT223 Nexperia USA Inc.	87,196 In Stock	1 : ¥3.94000 Cut Tape (CT) 4,000 : ¥1.33697 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	5.5A (Tc)	4.5V, 10V	137mOhm @ 5A, 10V	2V @ 1mA	5.3 nC @ 5 V	±15V	320 pF @ 25 V	-	8W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-223	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.