Single FETs, MOSFETs

Results: 3
Manufacturer
Littelfuse Inc.Rohm Semiconductor
Series
-HiPerFET™, Ultra X3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V300 V500 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)15A (Tc)38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
39mOhm @ 15A, 10V50mOhm @ 19A, 10V750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA4.5V @ 1mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.3 nC @ 10 V35 nC @ 10 V130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1030 pF @ 20 V2240 pF @ 25 V4700 pF @ 25 V
Power Dissipation (Max)
25W (Tc)240W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-247 (IXTH)TO-252TO-263HV
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RB098BM-40FNSTL
RD3G01BATTL1
PCH -40V -15A POWER MOSFET - RD3
Rohm Semiconductor
582
In Stock
1 : ¥9.11000
Cut Tape (CT)
2,500 : ¥3.78035
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
15A (Tc)
4.5V, 10V
39mOhm @ 15A, 10V
2.5V @ 1mA
19.3 nC @ 10 V
±20V
1030 pF @ 20 V
-
25W (Tc)
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-247-AD-EP-(H)
IXTH11P50
MOSFET P-CH 500V 11A TO247
Littelfuse Inc.
140
In Stock
1 : ¥88.91000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
500 V
11A (Tc)
10V
750mOhm @ 5.5A, 10V
5V @ 250µA
130 nC @ 10 V
±20V
4700 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
TO-263AB
IXFA38N30X3
MOSFET N-CH 300V 38A TO263
Littelfuse Inc.
0
In Stock
3,800
Factory
Check Lead Time
1 : ¥50.74000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
38A (Tc)
10V
50mOhm @ 19A, 10V
4.5V @ 1mA
35 nC @ 10 V
±20V
2240 pF @ 25 V
-
240W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263HV
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.