Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 20A, 10V38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 4.5 V93 nC @ 10 V
Vgs (Max)
±8V±25V
Input Capacitance (Ciss) (Max) @ Vds
339 pF @ 10 V3600 pF @ 15 V
Power Dissipation (Max)
940mW52W (Tc)
Supplier Device Package
PowerPAK® 1212-8SOT-23-3
Package / Case
PowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN2056U-7
MOSFET N-CHANNEL 20V 4A SOT23-3
Diodes Incorporated
105,461
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.69704
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
38mOhm @ 3.6A, 4.5V
1V @ 250µA
4.3 nC @ 4.5 V
±8V
339 pF @ 10 V
-
940mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SI7153DN-T1-GE3
MOSFET P-CH 30V 18A PPAK1212-8
Vishay Siliconix
10,468
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.76732
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
18A (Tc)
4.5V, 10V
9.5mOhm @ 20A, 10V
2.5V @ 250µA
93 nC @ 10 V
±25V
3600 pF @ 15 V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.