Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiVishay Siliconix
Series
-TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
25 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
460mA (Ta)12A (Tc)19.1A (Ta), 65.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 10A, 10V300mOhm @ 7.2A, 10V1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 4.5 V38 nC @ 10 V87 nC @ 10 V
Vgs (Max)
±8V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
63 pF @ 10 V860 pF @ 25 V3250 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)3.7W (Ta), 88W (Tc)4.8W (Ta), 56.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® SO-8SOT-23-3TO-263 (D2PAK)
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV304P
MOSFET P-CH 25V 460MA SOT23
onsemi
68,795
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.85790
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
25 V
460mA (Ta)
2.7V, 4.5V
1.1Ohm @ 500mA, 4.5V
1.5V @ 250µA
1.5 nC @ 4.5 V
±8V
63 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK-SO-8-Single_Top
SIR1309DP-T1-GE3
P-CHANNEL 30 V (D-S) MOSFET POWE
Vishay Siliconix
4,582
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥2.45577
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
19.1A (Ta), 65.7A (Tc)
4.5V, 10V
7.3mOhm @ 10A, 10V
2.5V @ 250µA
87 nC @ 10 V
±25V
3250 pF @ 15 V
-
4.8W (Ta), 56.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263AB
IRF9530SPBF
MOSFET P-CH 100V 12A D2PAK
Vishay Siliconix
1,157
In Stock
1 : ¥19.29000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
10V
300mOhm @ 7.2A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
860 pF @ 25 V
-
3.7W (Ta), 88W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.