Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS84W-7-F MOSFET P-CH 50V 130MA SOT323 Diodes Incorporated	353,706 In Stock 7,731,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.57289 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	10Ohm @ 100mA, 5V	2V @ 1mA	-	±20V	45 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
FDN360P MOSFET P-CH 30V 2A SUPERSOT3 onsemi	74,080 In Stock 54,000 Factory	1 : ¥4.19000 Cut Tape (CT) 3,000 : ¥1.13023 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4.5V, 10V	80mOhm @ 2A, 10V	3V @ 250µA	9 nC @ 10 V	±20V	298 pF @ 15 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSC060N10NS3GATMA1 MOSFET N-CH 100V 14.9/90A 8TDSON Infineon Technologies	17,142 In Stock	1 : ¥20.28000 Cut Tape (CT) 5,000 : ¥8.81537 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14.9A (Ta), 90A (Tc)	6V, 10V	6mOhm @ 50A, 10V	3.5V @ 90µA	68 nC @ 10 V	±20V	4900 pF @ 50 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.