Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 5A, 4.5V23.9mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 4.5 V6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
655 pF @ 10 V997 pF @ 6 V
Power Dissipation (Max)
2.7W (Ta)2.9W (Ta)
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-WSON
CSD25310Q2
MOSFET P-CH 20V 20A 6WSON
Texas Instruments
44,282
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.38540
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
20A (Ta)
1.8V, 4.5V
23.9mOhm @ 5A, 4.5V
1.1V @ 250µA
4.7 nC @ 4.5 V
±8V
655 pF @ 10 V
-
2.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
6-WSON
CSD13202Q2
MOSFET N-CH 12V 22A 6WSON
Texas Instruments
10,468
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.55327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
22A (Ta)
2.5V, 4.5V
9.3mOhm @ 5A, 4.5V
1.1V @ 250µA
6.6 nC @ 4.5 V
±8V
997 pF @ 6 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.