Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.STMicroelectronics
Series
-STripFET™ III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)37A (Tc)
Rds On (Max) @ Id, Vgs
27mOhm @ 10A, 5V35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17.1 nC @ 5 V20.5 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
970 pF @ 25 V2703 pF @ 25 V
Power Dissipation (Max)
4.3W (Ta), 70W (Tc)95W (Tc)
Supplier Device Package
LFPAK56, Power-SO8PowerFlat™ (5x6)
Package / Case
8-PowerVDFNSC-100, SOT-669
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8 PowerVDFN
STL8N10LF3
MOSFET N CH 100V 20A PWRFLT5X6
STMicroelectronics
5,770
In Stock
1 : ¥15.11000
Cut Tape (CT)
3,000 : ¥6.79865
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
20A (Tc)
5V, 10V
35mOhm @ 4A, 10V
3V @ 250µA
20.5 nC @ 10 V
±20V
970 pF @ 25 V
-
4.3W (Ta), 70W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
LFPAK56/POWER-SO8/SOT669
BUK9Y25-80E,115
MOSFET N-CH 80V 37A LFPAK56
Nexperia USA Inc.
2,910
In Stock
1 : ¥7.22000
Cut Tape (CT)
1,500 : ¥3.18485
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
37A (Tc)
5V, 10V
27mOhm @ 10A, 5V
2.1V @ 1mA
17.1 nC @ 5 V
±10V
2703 pF @ 25 V
-
95W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.