Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiRohm Semiconductor
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 128A (Tc)60A (Tc)
Rds On (Max) @ Id, Vgs
4.85mOhm @ 16A, 10V10.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 50 V4065 pF @ 50 V
Power Dissipation (Max)
3W (Ta), 73W (Tc)3.3W (Ta), 187W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-HSOP8-PQFN (5x6)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS86150ET100
MOSFET N-CH 100V 16A POWER56
onsemi
7,923
In Stock
6,000
Factory
1 : ¥38.18000
Cut Tape (CT)
3,000 : ¥28.22224
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
16A (Ta), 128A (Tc)
6V, 10V
4.85mOhm @ 16A, 10V
4V @ 250µA
62 nC @ 10 V
±20V
4065 pF @ 50 V
-
3.3W (Ta), 187W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
MFG_RS6P060BHTB1
RS6P060BHTB1
NCH 100V 60A, HSOP8, POWER MOSFE
Rohm Semiconductor
2,230
In Stock
1 : ¥19.05000
Cut Tape (CT)
2,500 : ¥8.00456
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
60A (Tc)
6V, 10V
10.6mOhm @ 60A, 10V
4V @ 1mA
25 nC @ 10 V
±20V
1560 pF @ 50 V
-
3W (Ta), 73W (Tc)
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.