Single FETs, MOSFETs

Results: 4
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDInfineon TechnologiesonsemiToshiba Semiconductor and Storage
Series
-HEXFET®PowerTrench®U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)2A (Ta)3.4A (Ta)6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
36mOhm @ 4A, 10V63mOhm @ 3.4A, 4.5V70mOhm @ 2A, 4.5V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.1V @ 10µA1.5V @ 250µA1.6V @ 250µA2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V9.3 nC @ 10 V10 nC @ 4.5 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V270 pF @ 24 V550 pF @ 10 V779 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)500mW (Ta)1.3W (Ta)2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C150°C (TJ)
Supplier Device Package
6-UDFNB (2x2)Micro3™/SOT-23SOT-23SOT-23-3
Package / Case
6-WDFN Exposed PadTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN340P
MOSFET P-CH 20V 2A SUPERSOT3
onsemi
84,242
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.01350
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2A (Ta)
2.5V, 4.5V
70mOhm @ 2A, 4.5V
1.5V @ 250µA
10 nC @ 4.5 V
±8V
779 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6346TRPBF
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
72,431
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83414
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
270 pF @ 24 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
18,573
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18673
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
36mOhm @ 4A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
-
2.5W (Ta)
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
213,313
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22873
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.