Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V
Current - Continuous Drain (Id) @ 25°C
16.2A (Ta), 122A (Tc)57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V10V
Rds On (Max) @ Id, Vgs
6.3mOhm @ 50A, 10V23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.6V @ 153µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3130 pF @ 25 V4550 pF @ 75 V
Power Dissipation (Max)
3.8W (Ta), 214W (Tc)200W (Tc)
Supplier Device Package
D2PAKPG-HSOF-8
Package / Case
8-PowerSFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3710STRLPBF
MOSFET N-CH 100V 57A D2PAK
Infineon Technologies
16,114
In Stock
1 : ¥15.27000
Cut Tape (CT)
800 : ¥8.54281
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
23mOhm @ 28A, 10V
4V @ 250µA
130 nC @ 10 V
±20V
3130 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
3,926
In Stock
1 : ¥39.74000
Cut Tape (CT)
2,000 : ¥19.35006
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
16.2A (Ta), 122A (Tc)
8V, 10V
6.3mOhm @ 50A, 10V
4.6V @ 153µA
59 nC @ 10 V
±20V
4550 pF @ 75 V
-
3.8W (Ta), 214W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.