Single FETs, MOSFETs

Results: 2
Manufacturer
EPCTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V100 V
Current - Continuous Drain (Id) @ 25°C
2.1A (Ta)60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V5V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 5V180mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 4.5 V16.3 nC @ 5 V
Vgs (Max)
+6V, -4V8V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 6 V2703 pF @ 50 V
Power Dissipation (Max)
500mW (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
3-PICOSTARDie
Package / Case
3-XFDFNDie
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2218
EPC2218
GANFET N-CH 100V DIE
EPC
14,478
In Stock
1 : ¥49.34000
Cut Tape (CT)
1,000 : ¥27.98517
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
60A (Ta)
5V
3.2mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2703 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
CSDxxxxF4T
CSD13381F4
MOSFET N-CH 12V 2.1A 3PICOSTAR
Texas Instruments
466,552
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.43988
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
2.1A (Ta)
1.8V, 4.5V
180mOhm @ 500mA, 4.5V
1.1V @ 250µA
1.4 nC @ 4.5 V
8V
200 pF @ 6 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.