Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesVishay SiliconixWolfspeed, Inc.
Series
-OptiMOS™TrenchFET®Z-FET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V1200 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2A (Ta)2.3A (Tc)3.9A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V80mOhm @ 2A, 10V120mOhm @ 2.8A, 4.5V150mOhm @ 2.3A, 10V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 11µA2.4V @ 10mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V5.3 nC @ 10 V8 nC @ 4.5 V161 nC @ 20 V
Vgs (Max)
±8V±20V+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V205 pF @ 30 V425 pF @ 10 V500 pF @ 15 V2788 pF @ 1000 V
Power Dissipation (Max)
300mW (Ta)500mW (Ta)2W (Tc)3W (Tc)463W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TA)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-SOT23SOT-23-3SOT-23-3 (TO-236)TO-236 (SOT-23)TO-247-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
Infineon Technologies
308,007
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.91747
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
4.5V, 10V
80mOhm @ 2A, 10V
2V @ 11µA
5 nC @ 10 V
±20V
500 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
C2D10120D
C2M0025120D
SICFET N-CH 1200V 90A TO247-3
Wolfspeed, Inc.
162
In Stock
1 : ¥807.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
20V
34mOhm @ 50A, 20V
2.4V @ 10mA
161 nC @ 20 V
+25V, -10V
2788 pF @ 1000 V
-
463W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SOT-23-3
BSS138Q-7-F
MOSFET N-CH 50V 200MA SOT23-3
Diodes Incorporated
6,740
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.39295
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SQ2301ES-T1_GE3
MOSFET P-CH 20V 3.9A TO236
Vishay Siliconix
5,300
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.42120
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.9A (Tc)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.5V @ 250µA
8 nC @ 4.5 V
±8V
425 pF @ 10 V
-
3W (Tc)
-55°C ~ 175°C (TA)
Automotive
AEC-Q101
Surface Mount
TO-236 (SOT-23)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SQ2308CES-T1_GE3
MOSFET N-CH 60V 2.3A SOT23
Vishay Siliconix
31,078
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.77589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
2.3A (Tc)
4.5V, 10V
150mOhm @ 2.3A, 10V
2.5V @ 250µA
5.3 nC @ 10 V
±20V
205 pF @ 30 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.