Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V40 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 18A, 4.5V80mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.2 nC @ 10 V65 nC @ 5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
587 pF @ 20 V4300 pF @ 10 V
Power Dissipation (Max)
720mW (Ta)42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-TSON Advance (3.1x3.1)SOT-23-3
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP4065S-7
MOSFET P-CH 40V 2.4A SOT23
Diodes Incorporated
27,301
In Stock
177,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.77194
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
80mOhm @ 4.2A, 10V
3V @ 250µA
12.2 nC @ 10 V
±20V
587 pF @ 20 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
5,901
In Stock
1 : ¥9.85000
Cut Tape (CT)
5,000 : ¥2.37342
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
36A (Tc)
2.5V, 4.5V
4.7mOhm @ 18A, 4.5V
1.2V @ 1mA
65 nC @ 5 V
±12V
4300 pF @ 10 V
-
42W (Tc)
150°C (TJ)
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.