Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
CoolMOS™ C7MDmesh™ VSuperMESH5™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
650 V800 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)12A (Tc)15A (Tc)75A (Tc)
Rds On (Max) @ Id, Vgs
19mOhm @ 58.3A, 10V195mOhm @ 2.9A, 10V240mOhm @ 7.5A, 10V2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.92mA4V @ 290µA5V @ 100µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V23 nC @ 10 V31 nC @ 10 V215 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
175 pF @ 100 V1150 pF @ 400 V1240 pF @ 100 V9900 pF @ 400 V
Power Dissipation (Max)
38W (Tc)57W (Tc)75W (Tc)446W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-4PG-VSON-4PowerFlat™ (5x6)
Package / Case
4-PowerTSFN8-PowerVDFNTO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8PowerVDFN
STL18N65M5
MOSFET N-CH 650V 15A POWERFLAT
STMicroelectronics
16,961
In Stock
1 : ¥24.30000
Cut Tape (CT)
3,000 : ¥11.82825
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
15A (Tc)
10V
240mOhm @ 7.5A, 10V
5V @ 250µA
31 nC @ 10 V
±25V
1240 pF @ 100 V
-
57W (Tc)
150°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
TO-247-4
IPZ65R019C7XKSA1
MOSFET N-CH 650V 75A TO247-4
Infineon Technologies
1,203
In Stock
1 : ¥160.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
8PowerVDFN
STL4N80K5
MOSFET N-CH 800V 2.5A POWERFLAT
STMicroelectronics
6,000
In Stock
1 : ¥14.61000
Cut Tape (CT)
3,000 : ¥6.60150
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
2.5Ohm @ 1.5A, 10V
5V @ 100µA
10.5 nC @ 10 V
±30V
175 pF @ 100 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
PG-VSON-4
IPL65R195C7AUMA1
MOSFET N-CH 650V 12A 4VSON
Infineon Technologies
1,937
In Stock
1 : ¥22.49000
Cut Tape (CT)
3,000 : ¥10.95754
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
12A (Tc)
10V
195mOhm @ 2.9A, 10V
4V @ 290µA
23 nC @ 10 V
±20V
1150 pF @ 400 V
-
75W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.