Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesMicro Commercial CoRohm Semiconductor
Series
-SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)2A (Ta)6A (Ta)9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V2.5V, 4.5V4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
37mOhm @ 6A, 4.5V120mOhm @ 2A, 10V250mOhm @ 6.8A, 10V8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100µA1.5V @ 1mA2V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V4.3 nC @ 5 V21 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
13 pF @ 5 V370 pF @ 10 V450 pF @ 15 V450 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)700mW (Ta)2W (Ta)42W (Tc)
Operating Temperature
-55°C ~ 150°C-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
HUML2020L8PG-TO252-3SOT-323TSMT3
Package / Case
8-PowerUDFNSC-70, SOT-323SC-96TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
SPD09P06PLGBTMA1
MOSFET P-CH 60V 9.7A TO252-3
Infineon Technologies
10,312
In Stock
1 : ¥7.31000
Cut Tape (CT)
2,500 : ¥3.02883
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
9.7A (Tc)
4.5V, 10V
250mOhm @ 6.8A, 10V
2V @ 250µA
21 nC @ 10 V
±20V
450 pF @ 25 V
-
42W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT 323
2SK3018-TP
MOSFET N-CH 30V 100MA SOT323
Micro Commercial Co
45,474
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60971
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V
8Ohm @ 10mA, 4V
1.5V @ 100µA
-
±20V
13 pF @ 5 V
-
200mW (Ta)
-55°C ~ 150°C
Surface Mount
SOT-323
SC-70, SOT-323
TSMT3
RQ5E020SPTL
MOSFET P-CH 30V 2A TSMT3
Rohm Semiconductor
2,470
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.55327
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
4V, 10V
120mOhm @ 2A, 10V
2.5V @ 1mA
4.3 nC @ 5 V
±20V
370 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Surface Mount
TSMT3
SC-96
RF4P025ATTCR
RF4E060AJTCR
MOSFET N-CH 30V 6A HUML2020L8
Rohm Semiconductor
2,249
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.65222
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
2.5V, 4.5V
37mOhm @ 6A, 4.5V
1.5V @ 1mA
4 nC @ 4.5 V
±12V
450 pF @ 15 V
-
2W (Ta)
150°C (TJ)
Surface Mount
HUML2020L8
8-PowerUDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.