Single FETs, MOSFETs

Results: 3
Drain to Source Voltage (Vdss)
40 V75 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)183A (Tc)195A (Tc)
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V2.5mOhm @ 100A, 10V3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.7V @ 250µA3.9V @ 100µA3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V225 nC @ 10 V270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4730 pF @ 25 V7330 pF @ 25 V10150 pF @ 25 V
Power Dissipation (Max)
143W (Tc)230W (Tc)290W (Tc)
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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRFB7437PBF
MOSFET N-CH 40V 195A TO220AB
Infineon Technologies
2,159
In Stock
1 : ¥8.95000
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N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
2mOhm @ 100A, 10V
3.9V @ 150µA
225 nC @ 10 V
±20V
7330 pF @ 25 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB7440PBF
MOSFET N-CH 40V 120A TO220AB
Infineon Technologies
789
In Stock
1 : ¥12.64000
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N-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
6V, 10V
2.5mOhm @ 100A, 10V
3.9V @ 100µA
135 nC @ 10 V
±20V
4730 pF @ 25 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB7734PBF
MOSFET N-CH 75V 183A TO220AB
Infineon Technologies
6,374
In Stock
1 : ¥14.86000
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N-Channel
MOSFET (Metal Oxide)
75 V
183A (Tc)
6V, 10V
3.5mOhm @ 100A, 10V
3.7V @ 250µA
270 nC @ 10 V
±20V
10150 pF @ 25 V
-
290W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.