Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMG2301L-7 MOSFET P-CH 20V 3A SOT23 Diodes Incorporated	107,552 In Stock	1 : ¥2.63000 Cut Tape (CT) 3,000 : ¥0.43742 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	2.5V, 4.5V	120mOhm @ 2.8A, 4.5V	1.2V @ 250µA	5.5 nC @ 4.5 V	±8V	476 pF @ 10 V	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
CSD19538Q3A MOSFET N-CH 100V 15A 8VSON Texas Instruments	14,900 In Stock	1 : ¥4.68000 Cut Tape (CT) 2,500 : ¥1.78422 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	15A (Ta)	6V, 10V	59mOhm @ 5A, 10V	3.8V @ 250µA	4.3 nC @ 10 V	±20V	454 pF @ 50 V	-	2.8W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (3x3.3)	8-PowerVDFN
IPD33CN10NGATMA1 MOSFET N-CH 100V 27A TO252-3 Infineon Technologies	33,876 In Stock	1 : ¥5.75000 Cut Tape (CT) 2,500 : ¥3.05201 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	27A (Tc)	10V	33mOhm @ 27A, 10V	4V @ 29µA	24 nC @ 10 V	±20V	1570 pF @ 50 V	-	58W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.