Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IPB180N10S402ATMA1 MOSFET N-CH 100V 180A TO263-7 Infineon Technologies	2,117 In Stock	1 : ¥49.83000 Cut Tape (CT) 1,000 : ¥28.27298 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	2.5mOhm @ 100A, 10V	3.5V @ 275µA	200 nC @ 10 V	±20V	14600 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
PMV28XPEAR SMALL SIGNAL MOSFET FOR AUTOMOTI Nexperia USA Inc.	0 In Stock Check Lead Time	3,000 : ¥0.93378 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5A (Ta)	2.5V, 8V	33mOhm @ 5A, 8V	1.3V @ 250µA	16 nC @ 4.5 V	±12V	1025 pF @ 10 V	-	610mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
FDD120AN15A0-F085 MOSFET N-CH 150V 14A DPAK onsemi	0 In Stock	Obsolete	PowerTrench®	Tape & Reel (TR) Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	14A (Tc)	10V	120mOhm @ 4A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	743 pF @ 25 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.