Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 20A, 10V39mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 4.5 V165 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 10 V5250 pF @ 15 V
Power Dissipation (Max)
750mW (Ta)2.5W (Ta)
Supplier Device Package
8-SOSOT-23-3 (TO-236)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF9310TRPBF
MOSFET P-CH 30V 20A 8SO
Infineon Technologies
12,720
In Stock
1 : ¥11.49000
Cut Tape (CT)
4,000 : ¥4.76733
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
20A (Tc)
4.5V, 10V
4.6mOhm @ 20A, 10V
2.4V @ 100µA
165 nC @ 10 V
±20V
5250 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SOT-23(TO-236)
SI2323DS-T1-BE3
P-CHANNEL 20-V (D-S) MOSFET
Vishay Siliconix
4,178
In Stock
1 : ¥5.83000
Cut Tape (CT)
3,000 : ¥2.20368
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
1.8V, 4.5V
39mOhm @ 4.7A, 4.5V
1V @ 250µA
19 nC @ 4.5 V
±8V
1020 pF @ 10 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.