Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-π-MOSV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3.3V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
300mOhm @ 1A, 10V6Ohm @ 170mA, 10V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V150 pF @ 10 V
Power Dissipation (Max)
200mW (Ta)1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23FSOT-323
Package / Case
SC-70, SOT-323SOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS123W-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
464,128
In Stock
1,056,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.40266
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2V @ 1mA
±20V
60 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
80,492
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18673
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
3.3V, 10V
300mOhm @ 1A, 10V
2V @ 1mA
±20V
150 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.