Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Tc)2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
300mOhm @ 2.5A, 10V1.2Ohm @ 660mA, 10V
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V601 pF @ 30 V
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)3W (Ta)
Supplier Device Package
SOT-223SOT-223-4
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
NDT2955
MOSFET P-CH 60V 2.5A SOT-223-4
onsemi
1,517
In Stock
1 : ¥5.42000
Cut Tape (CT)
4,000 : ¥2.06661
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2.5A (Ta)
4.5V, 10V
300mOhm @ 2.5A, 10V
4V @ 250µA
15 nC @ 10 V
±20V
601 pF @ 30 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
SOT223-3L
SIHFL9110TR-GE3
MOSFET P-CH 100V 1.1A SOT223
Vishay Siliconix
2,222
In Stock
1 : ¥4.76000
Cut Tape (CT)
2,500 : ¥1.79604
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.1A (Tc)
10V
1.2Ohm @ 660mA, 10V
4V @ 250µA
8.7 nC @ 10 V
±20V
200 pF @ 25 V
-
2W (Ta), 3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.