Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologies
Series
AlphaSGT™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
1.1mOhm @ 30A, 10V140mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.8 nC @ 10 V72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 50 V4700 pF @ 15 V
Power Dissipation (Max)
1.4W (Ta)2.5W (Ta), 96W (Tc)
Supplier Device Package
PG-TDSON-8-1SOT-23-3
Package / Case
3-SMD, SOT-23-3 Variant8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
435,038
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.75941
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2A (Ta)
4.5V, 10V
140mOhm @ 2A, 10V
2.7V @ 250µA
3.8 nC @ 10 V
±20V
250 pF @ 50 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
PG-TDSON-8-1
BSC011N03LSATMA1
MOSFET N-CH 30V 37A/100A TDSON
Infineon Technologies
35,936
In Stock
1 : ¥8.95000
Cut Tape (CT)
5,000 : ¥5.35690
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
37A (Ta), 100A (Tc)
4.5V, 10V
1.1mOhm @ 30A, 10V
2.2V @ 250µA
72 nC @ 10 V
±20V
4700 pF @ 15 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.