Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SSM6K361NU,LF MOSFET N-CH 100V 3.5A 6UDFNB Toshiba Semiconductor and Storage	23,656 In Stock	1 : ¥5.58000 Cut Tape (CT) 3,000 : ¥1.29846 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	69mOhm @ 2A, 10V	2.5V @ 100µA	3.2 nC @ 4.5 V	±20V	430 pF @ 15 V	-	1.25W (Ta)	150°C	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
CSD17382F4 MOSFET N-CH 30V 2.3A 3PICOSTAR Texas Instruments	5,810 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥0.78888 Tape & Reel (TR)	FemtoFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.3A (Ta)	1.8V, 8V	64mOhm @ 500mA, 8V	1.2V @ 250µA	2.7 nC @ 4.5 V	10V	347 pF @ 15 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PICOSTAR	3-XFDFN
DMN3009SFGQ-7 MOSFET N-CH 30V 16A PWRDI3333 Diodes Incorporated	930 In Stock 14,000 Factory	1 : ¥7.88000 Cut Tape (CT) 2,000 : ¥3.24415 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	16A (Ta), 45A (Tc)	4.5V, 10V	5.5mOhm @ 20A, 10V	2.5V @ 250µA	42 nC @ 10 V	±20V	2000 pF @ 15 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	POWERDI3333-8	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.