Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PSMN075-100MSEX MOSFET N-CH 100V 18A LFPAK33 Nexperia USA Inc.	41,372 In Stock	1 : ¥6.24000 Cut Tape (CT) 1,500 : ¥2.64963 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	18A (Tj)	10V	71mOhm @ 5A, 10V	4V @ 1mA	16.4 nC @ 10 V	±20V	773 pF @ 50 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
PSMN040-100MSEX MOSFET N-CH 100V 30A LFPAK33 Nexperia USA Inc.	18,143 In Stock	1 : ¥6.98000 Cut Tape (CT) 1,500 : ¥3.07545 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	30A (Tj)	10V	36.6mOhm @ 10A, 10V	4V @ 1mA	30 nC @ 10 V	±20V	1470 pF @ 50 V	-	91W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
BSC350N20NSFDATMA1 MOSFET N-CH 200V 35A TDSON-8-1 Infineon Technologies	10,594 In Stock	1 : ¥24.14000 Cut Tape (CT) 5,000 : ¥11.26590 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	35A (Tc)	10V	35mOhm @ 35A, 10V	4V @ 90µA	30 nC @ 10 V	±20V	2410 pF @ 100 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
FDMC3612 MOSFET N-CH 100V 3.3A/16A 8MLP onsemi	7,544 In Stock 660,000 Factory	1 : ¥10.92000 Cut Tape (CT) 3,000 : ¥4.51605 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.3A (Ta), 16A (Tc)	6V, 10V	110mOhm @ 3.3A, 10V	4V @ 250µA	21 nC @ 10 V	±20V	880 pF @ 50 V	-	2.3W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.