Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
300mOhm @ 1A, 10V1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
12.3 pF @ 15 V135 pF @ 15 V
Power Dissipation (Max)
125mW (Ta)500mW (Ta)
Supplier Device Package
3-XDFN (0.42x0.62)SOT-23-3
Package / Case
3-XFDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
NDS352AP
MOSFET P-CH 30V 900MA SUPERSOT3
onsemi
8,801
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.19733
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
900mA (Ta)
4.5V, 10V
300mOhm @ 1A, 10V
2.5V @ 250µA
3 nC @ 4.5 V
±20V
135 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
3-XDFN
NTNS0K8N021ZTCG
MOSFET N-CH 20V 220MA 3XDFN
onsemi
3,874
In Stock
1 : ¥8.70000
Cut Tape (CT)
-
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
220mA (Ta)
1.5V, 4.5V
1.5Ohm @ 100mA, 4.5V
1V @ 250µA
-
±8V
12.3 pF @ 15 V
-
125mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-XDFN (0.42x0.62)
3-XFDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.