Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
25 V30 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
680mA (Ta)1.3A (Ta)13.5A (Ta), 40A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V6V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 50A, 10V8.6mOhm @ 20A, 10V350mOhm @ 1.4A, 10V450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA3.1V @ 105µA3.8V @ 67µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 4.5 V6.1 nC @ 5 V54 nC @ 10 V57.5 nC @ 10 V
Vgs (Max)
±8V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V424 pF @ 50 V3900 pF @ 40 V4785 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)1.1W (Ta)2.1W (Ta), 69W (Tc)2.5W (Ta), 104W (Tc)
Supplier Device Package
PG-TDSON-8-7PG-TSDSON-8SOT-23-3SOT-26
Package / Case
8-PowerTDFNSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV303N
MOSFET N-CH 25V 680MA SOT23
onsemi
300,504
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.59363
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
680mA (Ta)
2.7V, 4.5V
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3 nC @ 4.5 V
±8V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 26
ZXMP10A17E6TA
MOSFET P-CH 100V 1.3A SOT26
Diodes Incorporated
23,154
In Stock
240,000
Factory
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥2.30668
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.3A (Ta)
6V, 10V
350mOhm @ 1.4A, 10V
4V @ 250µA
6.1 nC @ 5 V
±20V
424 pF @ 50 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
8-Power TDFN
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
Infineon Technologies
11,617
In Stock
1 : ¥7.22000
Cut Tape (CT)
5,000 : ¥2.60588
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
13.5A (Ta), 40A (Tc)
6V, 10V
8.6mOhm @ 20A, 10V
3.1V @ 105µA
57.5 nC @ 10 V
±25V
4785 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
8-Power TDFN
BSC040N08NS5ATMA1
MOSFET N-CH 80V 100A TDSON
Infineon Technologies
12,718
In Stock
1 : ¥16.75000
Cut Tape (CT)
5,000 : ¥7.24992
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 67µA
54 nC @ 10 V
±20V
3900 pF @ 40 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.