Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-HEXFET®
Packaging
BulkTube
Drain to Source Voltage (Vdss)
50 V55 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V10V
Rds On (Max) @ Id, Vgs
60mOhm @ 11A, 10V100mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V24 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V480 pF @ 25 V
Power Dissipation (Max)
1W (Tc)45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
4-HVMDIPTO-220AB
Package / Case
4-DIP (0.300", 7.62mm)TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLZ24NPBF
MOSFET N-CH 55V 18A TO220AB
Infineon Technologies
3,433
In Stock
1 : ¥12.48000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
55 V
18A (Tc)
4V, 10V
60mOhm @ 11A, 10V
2V @ 250µA
15 nC @ 5 V
±16V
480 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
4-DIP
IRFD020PBF
MOSFET N-CH 50V 2.4A 4DIP
Vishay Siliconix
6,372
In Stock
1 : ¥13.46000
Bulk
-
Bulk
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
50 V
2.4A (Tc)
10V
100mOhm @ 1.4A, 10V
4V @ 250µA
24 nC @ 10 V
±20V
400 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.