Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedTexas InstrumentsVishay Siliconix
Series
-NexFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V500 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)7.2A (Ta), 23.6A (Tc)8A (Tc)14A (Ta), 44A (Tc)60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V3V, 8V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 25A, 10V10.3mOhm @ 10A, 8V50mOhm @ 7A, 10V240mOhm @ 2A, 4.5V850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.8V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V5.1 nC @ 4.5 V25 nC @ 10 V30 nC @ 4.5 V63 nC @ 10 V
Vgs (Max)
±8V+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V700 pF @ 15 V1300 pF @ 25 V1377 pF @ 30 V4420 pF @ 15 V
Power Dissipation (Max)
1.9W (Ta)2.7W (Ta)2.8W (Ta), 108W (Tc)3W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-VSON-CLIP (3.3x3.3)SOT-23-3 (TO-236)TO-252-3TO-263 (D2PAK)
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD17575Q3
MOSFET N-CH 30V 60A 8VSON
Texas Instruments
55,164
In Stock
1 : ¥6.16000
Cut Tape (CT)
2,500 : ¥3.27354
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
60A (Ta)
4.5V, 10V
2.3mOhm @ 25A, 10V
1.8V @ 250µA
30 nC @ 4.5 V
±20V
4420 pF @ 15 V
-
2.8W (Ta), 108W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
CSD1632x Series 8-SON
CSD17308Q3
MOSFET N-CH 30V 14A/44A 8VSON
Texas Instruments
29,405
In Stock
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥2.85948
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
14A (Ta), 44A (Tc)
3V, 8V
10.3mOhm @ 10A, 8V
1.8V @ 250µA
5.1 nC @ 4.5 V
+10V, -8V
700 pF @ 15 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
TO-252-2
DMPH6050SK3-13
MOSFET P-CH 60V 7.2A/23.6A TO252
Diodes Incorporated
33,618
In Stock
320,000
Factory
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.96165
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.2A (Ta), 23.6A (Tc)
4.5V, 10V
50mOhm @ 7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1377 pF @ 30 V
-
1.9W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23(TO-236)
SQ2364EES-T1_BE3
N-CHANNEL 60-V (D-S) 175C MOSFET
Vishay Siliconix
6,658
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.77589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Tc)
1.5V, 4.5V
240mOhm @ 2A, 4.5V
1V @ 250µA
2.5 nC @ 4.5 V
±8V
330 pF @ 25 V
-
3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263AB
IRF840STRRPBF
MOSFET N-CH 500V 8A D2PAK
Vishay Siliconix
700
In Stock
1 : ¥22.49000
Cut Tape (CT)
800 : ¥12.58706
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1300 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.