Single FETs, MOSFETs

Results: 3
Manufacturer
Littelfuse Inc.Vishay Siliconix
Series
TrenchFET®TrenchFET® Gen IVUltra X4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V150 V
Current - Continuous Drain (Id) @ 25°C
23.8A (Ta), 80.3A (Tc)50A (Tc)400A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 100A, 10V4.4mOhm @ 15A, 10V8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V210 nC @ 10 V430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1980 pF @ 30 V9950 pF @ 25 V14500 pF @ 25 V
Power Dissipation (Max)
5W (Ta), 57W (Tc)71W (Tc)1500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PLUS247™-3PowerPAK® SO-8TO-252AA
Package / Case
PowerPAK® SO-8TO-247-3 VariantTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8 Single
SIR186LDP-T1-RE3
N-CHANNEL 60-V (D-S) MOSFET POWE
Vishay Siliconix
3,807
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥3.28224
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23.8A (Ta), 80.3A (Tc)
4.5V, 10V
4.4mOhm @ 15A, 10V
2.5V @ 250µA
48 nC @ 10 V
±20V
1980 pF @ 30 V
-
5W (Ta), 57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PLUS247
IXTX400N15X4
MOSFET N-CH 150V 400A PLUS247
Littelfuse Inc.
929
In Stock
1 : ¥244.89000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
400A (Tc)
10V
3.1mOhm @ 100A, 10V
4.5V @ 1mA
430 nC @ 10 V
±20V
14500 pF @ 25 V
-
1500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-252
SQD40081EL_GE3
MOSFET P-CH 40V 50A TO252AA
Vishay Siliconix
8,434
In Stock
1 : ¥10.84000
Cut Tape (CT)
2,000 : ¥4.46951
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
8.5mOhm @ 25A, 10V
2.5V @ 250µA
210 nC @ 10 V
±20V
9950 pF @ 25 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.