Single FETs, MOSFETs

Results: 4
Series
CoolMOS™ C6CoolMOS™ CFD2OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
40 V80 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)30A (Tc)89A (Tc)410A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 100A, 10V2.8mOhm @ 89A, 10V125mOhm @ 14.5A, 10V190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 960µA3.8V @ 275µA4V @ 95µA4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V96 nC @ 10 V120 nC @ 10 V231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 100 V2127 pF @ 100 V9500 pF @ 20 V16250 pF @ 40 V
Power Dissipation (Max)
34W (Tc)38W (Tc)219W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-8-1PG-TO220-FPPG-TO263-3
Package / Case
8-PowerSFNTO-220-3 Full PackTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3,009
In Stock
1 : ¥45.97000
Cut Tape (CT)
2,000 : ¥22.39029
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
410A (Tj)
6V, 10V
1.1mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R125C6ATMA1
MOSFET N-CH 600V 30A D2PAK
Infineon Technologies
3,355
In Stock
1 : ¥45.48000
Cut Tape (CT)
1,000 : ¥23.52328
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
125mOhm @ 14.5A, 10V
3.5V @ 960µA
96 nC @ 10 V
±20V
2127 pF @ 100 V
-
219W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
500
In Stock
1 : ¥19.46000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
89A (Tc)
10V
2.8mOhm @ 89A, 10V
4V @ 95µA
120 nC @ 10 V
±20V
9500 pF @ 20 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
MOSFETTO247
IPA65R190CFDXKSA2
MOSFET N-CH 650V 17.5A TO220
Infineon Technologies
303
In Stock
1 : ¥27.50000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
17.5A (Tc)
10V
190mOhm @ 7.3A, 10V
4.5V @ 700µA
68 nC @ 10 V
±20V
1850 pF @ 100 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.